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    • 专利摘要:
    DEVICE FOR HIGH TEMPERATURE RADIATION DETECTION IN A WELL.The present invention relates to an apparatus configured to detect radiation at high temperatures in a well bore penetrating the earth. The apparatus includes a scintillation material (60) that interacts with radiation to generate photons, at least one solid state photodetector (61) optically coupled to the scintillation material (60) and configured to detect radiation when detecting photons generated, and at least one optical element (70) disposed between the scintillation material (60) and at least one solid state photodetector (61) and configured to concentrate the photons generated in the scintillation material (60) on the at least one solid state photodetector (61).
    公开号:BR112013010357A2
    申请号:R112013010357-4
    申请日:2011-10-27
    公开日:2020-10-13
    发明作者:Anton Nikitin；Rocco DiFoggio；Alexandr Vinokurov；Mikhail Korjik
    申请人:Baker Hughes Incorporated；
    IPC主号:
    专利说明:

    Invention Patent Descriptive Report for "APPLIANCE
    FOR HIGH TEMPERATURE RADIATION DETECTION IN A WELL ". Cross-references to related applications This application claims the priority benefits of US Provisional Patent Application No. 61 / 408,288, filed on October 29, 2010, contents of which are incorporated herein by reference in their entirety.
    1. Field of the Invention The present invention relates to an apparatus and method for characterizing subsurface materials from within a well bore penetrating subsurface materials.
    2. Description of the Related Art Well bores are drilled deep into the earth for many applications such as hydrocarbon production, geothermal production, and carbon dioxide sequestration. It is important to obtain accurate measurements of the properties of subsurface materials of interest in order to efficiently use costly drilling and production resources. Typically, measurements are carried out with a downhole tool configured to be placed in a borehole penetrating subsurface materials in order to get closer to the subsurface materials of interest. One category of measurements is to detect and measure radiation. The radiation can be electromagnetic such as gamma rays or particles such as neutrons. Also, the radiation can be natural or it can be induced by radiation emitted from the downhole tool. To measure radiation, the downhole tool includes a radiation detector sensitive to a particular type of radiation of interest. To be able to measure radiation accurately and reliably, a radiation detector must be able to operate and survive in a rock bottom environment. Unfortunately, a very high temperature environment can exist deep in the well bore.
    In addition, when the downhole tool is arranged in a downhole assembly near the tip of the drill on a drill string, a radiation detector can be exposed to high levels of vibration and shock from the drill.
    It would be well received in the drilling industry if radiation detectors could be built to withstand the high temperatures and accelerations that exist in a rock bottom environment.
    Brief summary An apparatus configured to detect radiation at * 10 high temperatures in a well hole penetrating the earth is described.
    The apparatus includes a scintillation material that interacts with radiation to generate photons, at least one solid state photodetector optically coupled to the scintillation material and configured to detect radiation by detecting the generated photons, and at least one optical element arranged between the scintillation material and at least one solid state photodetector and configured to concentrate the photons generated in the scintillation material on the at least one solid state photodetector.
    A device configured to detect radiation at high temperatures in a well bore penetrating the earth is also described.
    The apparatus includes: a downhole tool configured to be transported through the downhole; a scintillation material that interacts with radiation at high temperatures to generate photons; at least one solid state photodetector optically coupled to the scintillation material and configured to detect radiation by detecting the generated photons; and at least one optical element disposed between the scintillation material and the at least one solid-state photodetector and configured to concentrate the photons generated in the scintillation material on the at least one solid-state photoconductor.
    The scintillation material, the at least one solid state photoconductor, and the at least one optical element are arranged in the downhole tool.
    Brief description of the drawings The following descriptions should not be considered limiting in any way. With reference to the attached drawings, similar elements] are numbered with similar numbers: FIGURE 1 illustrates an exemplary modality of a downhole tool having a radiation detector arranged in a well furode penetrating the earth; FIGURE 2 illustrates the radio luminescence spectrum of YAP: Pr; FIGURE 3 illustrates the integrated intensity dependence of the YAP radioluminescence spectrum: Pr at different temperatures; “FIGURE 4 illustrates the YAP adsorption spectrum: Pr; FIGURE 5 illustrates the dependence of light yield of YAP: Pr on the sample adsorption at 280 nm; FIGURE 6 illustrates aspects of a configuration for the internal packaging of a radiation detector configured to detect gamma rays, FIGURE 7 illustrates aspects of another configuration for the internal packaging of a radiation detector configured to detect gamma rays; FIGURE 8 (prior art) illustrates a photoluminescence excitation spectrum and a Li-F glass photoluminescence emission spectrum with Pr added; FIGURE 9 illustrates aspects of a configuration for the internal packaging of a radiation detector configured to detect neutrons; and FIGURES 10A and 10B illustrate aspects of the optical structures configured to capture and concentrate light, which is generated in a scintillation material, in an array of semiconductor photodetectors.
    Detailed Description A detailed description of one or more modalities of the described method described here presented only as an example and not a limitation with reference to the Figures.
    Exemplary modalities of the techniques for providing radiation detectors that can operate at high temperatures (> 200ºC) and high accelerations (ie, shock and vibrations) experienced at the bottom of the well are described. These detectors are based on scintillation materials sensitive to neutrons and gamma rays capable of operating at high temperatures. The resistance of the proposed detectors is provided by solid-state photodetectors having quantum efficiency (QE) curves that correspond to the luminescence spectrum of the scintillation materials. Resistance is also achieved by implementing solid state photodetectors (usually produced from a semiconductor material) on “10 integrated electronic circuit boards. An advantage of using solid-state photodetectors is that they do not require high voltage guidance for operation. Different optical packaging schemes, photodetector configurations and "photodetector - crystal" optical coupling schemes for optimized performance are further described. The term "high temperature" as used here refers to temperatures in a well bore being at least 200 ° C.
    For reference, the detection of the current state of radiation in the oil service industry is presented. Currently, the oil service industry uses several different types of detectors to detect gamma rays and neutrons. The same are: scintillation detectors using Nal, BGO, Cs scintillation materials! and LaBrs: Ce and photomultiplier tubes (PMTs) as photodetectors to detect gamma rays; Geiger ionization detectors - Muller tube type for counting gamma ray measurements; Li-6 glass scintillation detectors to detect neutrons; proportional He-3 counters (ionization detectors) to detect neutrons.
    All said prior art detectors require high voltage for their operation. It is up to 1500 V for scintillation detectors using PMTs designed according to the classical scheme (for ceramic PMT voltage is approximately 3000 V) and up to 2000 V for ionization detectors depending on the type of gas mixture in the pipe. In the case of applications that require the detection of gamma ray or neutron at high temperature (> 200ºC) and in high shocks and vibrations, the aforementioned high voltage power provides failure much more frequently than any other parts of the detection systems. (including PMTs). As a result, the life of the detector is defined by the life of the high voltage power supply. It should be noted that the higher the voltage generated by the power supply source, the more likely it is to fail at high temperatures. “10 In the case of scintillation detectors, the other barrier for high temperature operation is imposed by PMTs. The greater sensitivity of U detection of light requires the use of a photocathode material with a low work function, high light absorption, and a great escape depth for low energy electrons. Materials that meet these needs have high evaporation coefficients and have to be deposited in the form of sub-micron thick layers. As a result, the useful life of a typical PMT photocathode at 200ºC is around 100 to 300 hours due to the deterioration of the photocathode layer through the evaporation of the photocathode material. This phenomenon guided by material science imposes limitations on the high temperature operation of PMTs.
    In general, the only particle detectors that are currently used by industry at 200ºC are Geiger - Muller (GM) tubes for gamma ray detection. There are at least two problems with using GM tubes. One problem is with the necessary reliability of the high voltage power supply sources. The other drawback of GM tubes is the low efficiency of gamma ray detection (-1.5%).
    Reference can now be made to FIGURE 1, which provides a context for the techniques related to the radiation detectors described here. FIGURE 1 illustrates an exemplary embodiment of the downhole tool 10 arranged in a wellhole 2 penetrating the earth 3, which includes a land formation 4. The land formation 4 represents any subsurface materials of interest that can be characterized by the downhole tool 10. The downhole tool 10 is: transported through wellhole 2 by a conveyor 5. As shown in figure 1, conveyor 5 is armored wiring 6. In addition to support the downhole tool 10 in the downhole 2, wiring 6 can still provide communications between the downhole tool 10 and a computer processing system 7 arranged on the earth's surface
    3. The computer processing system 7 is configured to record and / or process the measurements made by the downhole tool 10. In profiling while drilling (LWD) or * 10 measuring while profiling ( MWOD), conveyor 5 can be a drill string. In order to operate the downhole tool 10 and / or provide communication interfaces with the surface computer processing system 6, the downhole tool 10 includes downhole electronics 8.
    Still referring to FIGURE 1, the well-bottom tool 10 includes a radiation detector 11 to perform radiation measurements related to the characterization of formation 4. A radiation detector 11 is configured to detect radiation and / or electromagnetic particle. The term "detect" as used here is inclusive of measurement of the detected radiation.
    Non-limiting modalities of detecting radiation include a series of counts, a counting coefficient, and the energy of the detected radiation. Although not shown, the downhole tool 10 may include other components to characterize formation 4 such as a fluid formation tester or a pulsed neutron source to irradiate formation 4 with neutrons to induce generation of gamma rays. Pulsed neutron perforation is particularly useful in determining porosity, thermal neutron cross section, or elemental composition of the formation
    4.
    Techniques to provide a radiation detector 11 that can operate at high downhole temperatures and high accelerations require the use of a solid state photodetector produced from semiconductor materials with large bandwidth coupled to a scintillation material.
    tion. Avalanche photodiodes (APDs) produced from SIC are capable of 'operating up to 220ºC. But at the same time, the luminescence spectrum of the scintillation material must correspond to the quantum efficiency (QE) curve of the associated APD. In the case of a SiC APD, the desired wavelength range of the scintillation material is between 250 and 320 nm depending on the detailed design of the APD device and the type of SCI material used. Thus, in one embodiment, a radiation detector 11 can be constructed using the SiC APD coupled to a scintillation material with high light yield (LY) at high temperatures. The dependence on the rendi- "10 mentodeluzna temperature is described by the function, LY (Temperature).
    The high LY values at high temperatures are provided by the favorable combination of the properties of the crystal matrix of the scintillation material and luminescence centers in charge of the scintillation. The scintillation materials that have these properties are monocrystalline oxide compounds activated by Ce ions * and FOOT *. The scintillation process in said compounds is provided by the interconfiguration radiation transitions 5d—> f (Ce * *) and Afsd—> f (Pr *). For example, the said scintillation material as YA10;: Ce has a high LY parameter, a fast scintillation process, and a LY that is stable up to 100º C. partial yttrium replacement with lutetium decreases the LY value but improves LY (Temperature) dependence making it stable up to 150º C, LY (Temperature) dependence on the scintillation material can be improved in the high temperature range through its activation by Pr ions. Garnet scintillation crystal of Lutetium aluminum added with Pr 25. (LUzAIlOs: Pr or LAG: Pr) demonstrates the stable dependence on LY (Temperature) at temperatures as high as 170ºC. At the same time, Lu contains a substantial amount of naturally radioactive isotope, which emits alpha particles. The background auto-radiation created by the aforementioned alpha particles in the LAG: Pr scintillation detector signal makes it challenging to use these detectors to perform natural gamma ray measurements in well profiling. The best dependence on LY (Temperature) at high temperatures
    (ie, less LY reduction with increased temperature) for scintillation materials activated by Prº * compared to scintillators based on the same matrix and activated by Ce * * is due to the kinetic interconfigurations faster of radioactive transitions. For Pr * is it approximately twice as fast as for Ce *. As a result, the influence of non-radioactive relaxation of the excited electronic states in the scintillation process is less for the materials added with FOOT ”.
    The cooling of the interconfiguration luminescence of the PÉ ions can be caused by the following processes: 7 10 non-radioactive transitions of the excited electronic states at low f levels of the Door configuration; thermally induced transition of the excited electron from the radioactive state 4f5d to a higher level of * S, 9 of the electronic configuration of É; and thermally induced ionization of the 4f5d radioactive state in the conduction range.
    All of these processes depend on the temperature of the detector. The values of LY and forms of dependence of LY (Temperature) at high temperature are defined by the mutual location of the electronic levels of 4f5d and 'S, of the electronic configuration of the ions Pr * in the space of the electronic structure of the scintillation matrix. For example, in the case of thermally induced ionization of radioactive 4f5d state in the conductive band, the space between the low energy limit of the conductive band and the 4f5d AE state defines the said cooling mechanism: greater A4-Ez provides weaker dependence of LY (Temperature) in the temperature The Table shows the different parameters of the scintillation crystals added with (ons Pr and the referred parameters of electronic structure of the referred materials as space of band Er, state energy * Son, 4 / 5d radiative state energy calculated using the Stokes deviation value (E), energy space between the 'S state, and the 4f5d radiative state (AE), energy space between the lower limit of conductive band and the 4f5d radiative state (AEz). The light yield parameter was measured by plates of material 1 mm thick.
    Table 1. Christian! | Yield | Time of [4f 5d> ff lumi- | Space | E ,, | AE1, | ÃE>, of light, fallen, | max nescence | track, | eV | eV | ev
    EF nm 21 The data presented in Table 1 indicate that the YA103: Pr (YAP: Pr) yttrium aluminum perovskite has the highest Ev parameter. As a result, the contribution of thermally induced ionization of the radioactive states to the scintillation cooling process is the smallest among the materials shown above. Although the AE value for the Pr ** ions in YAP: Pr is the lowest, its absolute value is high enough to carry out the transition from the excited electron states 4f5d to the localized state 18, which is insignificant compared to with thermally induced ionization. As a result, for YAP: Pr, the dependence of LY (Temperature) on the temperature is the weakest among the materials under consideration. Reference can now be made to FIGURE 2, which shows the radioluminescence spectrum of the YAP crystal: Pr developed from the fusion with atomic concentrations of 0.05% of Pr. These spectra showed that the intensity The emitted light was located more deeply in the UV wavelength range compared to other materials and corresponds almost ideally to the SiC APD quantum efficiency curve. Furthermore, the formats of the spectrum measured at different temperatures are very close. This indicates the stability of LY of YAP: Pr up to at least 170ºC. The normalized integrated intensity dependence of the spectrum measured at temperature (for the YAP: Pr crystal developed from the fusion with 0.05% Pr% atomic concentration) shown in figure 3 confirms that LY (Temperature) does not fall with the increase of temperature. The intensity values in figure 3 are normalized by the intensity value of the spectrum measured at room temperature. High detection efficiency of a radiation detector 11 configured to detect gamma rays is provided when using scintillation crystals
    large volumes (tens of em ) and linear dimensions (tens] of cm). In this case, the self-absorption of scintillation light in the scintillation crystal itself becomes a challenge in a way to create a large volume detector.
    If self-absorption is high when most of the light emitted in the flicker event is absorbed into the crystal on the way to the photodetector, then the detectable signal may be weak.
    FIGURE 4 shows the adsorption spectrum of three different YAP samples: Pr developed in different experiments.
    Substantial adsorption occurs in the wavelength range of interest between 250 nm and 320 nm.
    One of the potential causes of the adsorption observed is the presence of Pr ** ions in the crystal matrix.
    The dependence of the LY parameter on adsorption at 280 nm for samples of YAP: Pr material developed in different runs is shown in figure 5. From this graph, the maximum of the YY: Pr LY parameter can be estimated if the ideal material has adsorption close to zero in the wavelength range where most of the radio luminance intensity is located.
    It is equal to 17-18% LY de Nal (TI). From the data presented above, it is shown that a radiation detector 11 configured to detect gamma rays and based on SiC APD and YAP: Pr can operate at high temperatures.
    Said configuration of a radiation detector 11 can be used as a counter or as a spectrometer when using YAP: Pr crystals with large volume and low self-absorption of light in the wavelength range between 250 nm and 320 nm (with low concentration of FOOT contaminants ”) Next, the configurations of the photodetector used in a radiation detector 11 configured to detect gamma rays at high temperatures are discussed.
    The advantages of solid state photodetectors compared to PMTs are: thickness (0.5 mm vs. approximately 40 to 90 mm); and supply voltage (less than 200 V vs. approximately 1500 V). The main challenge when using solid state photodetectors is the small light sensitive area compared to PMTs (<1 mm Vs. approved
    approximately 1000 mm for PMTs). Measures to improve capture and light, alone or in combination, can be taken to overcome this challenge. The first measure is the use of arrangements of a single solid-state photodetector device, or arrangements of a single solid-state photodetector device built on a single blade piece, or both. The second measure is the use of optical imaging elements located between the devices and the crystals such as "flywheel" or Fresnel type microlensing structures. The third measure is the use of non-optical imaging elements such as “10 light concentration cone arrangements with a special profile corresponding to the solid state photodetector arrangement. These optical elements are discussed in more detail further below.
    Characteristics of solid state photodetectors, such as small thickness and no need for high voltage for their operation, allows the construction of all the necessary electronic circuits much smaller than in the well-bottom radiation detectors of the prior art. As a result, much more housing volume for the detector can be filled with scintillation material compared to the PMT-based detector (currently for a typical scintillation gamma ray detector used in well profiling tools, the PUT occupies about 40% of the detector volume). In addition, the overall efficiency of the detector increases as a result of the increased amount of scintillation material. The referred increase in the efficiency of the detector without the increase in the total volume of the detector occupied by the detector inside the tool is important for the well profiling tools taking into account the limitations imposed by the diameter of the well in the outside diameter and in the internal space of the wells. well profiling tools. Reference can now be made to FIGURE 6, which illustrates a modality of a radiation detector 11 configured to detect gamma rays using a scintillation material 60 and an array of solid state photodetectors 61. An electronic board 62 includes signal analysis electronics detector 63 and a low voltage power source 64 for the
    solid state photodetector array 61. Scintillation material 60, solid state photodetector array 61, and electronics plate 62 are arranged in a housing detector 65. In said embodiment, no additional optical elements are used. The photodetectors 61 are located on one side of the electronics board 62 while the power source 64 and the detector signal analysis electronics 63 are located on the other side of the board 62. Non-limiting modalities of the electronics board 62 include: printed circuit (PCB) with packaged components; a PCB with some components assembled using "chip on the board" mounting method; a hybrid card with bare chips assembled from both sides; and two or more PCBs or hybrid plates stacked one on top of the other with solid state photodetectors 61 on the bottom of the first plate and optically coupled to scintillation material 60 and other components mounted on the other plates.
    Additional configurations of solid state photodetectors 61 on the surface of the scintillation material 60 are described. Non-limiting modalities of said configurations include: solid state photodetectors 61 on both flat sides of the scintillation material 60 as shown in figure 7 where the scintillation material 60 is a crystal, such as a scintillation crystalline ; an array of solid-state photodetectors 61 distributed along the axis and circumference on the curved side of the crystal as shown in figure 7 (in said embodiment, to minimize the outer diameter of the packaged crystal 60, all energy and signal processing circuits necessary to collect the signal from the photodetectors 61 in the array must be on the plates 62, which can be located adjacent to one or both sides of the crystal 60; or a combination of the settings described above). In the embodiment of figure 7, the curved surface of the circumference of the crystal 60 is covered with a light reflection layer
    68. The optical elements 70 shown in figure 7 can be produced from "fly eye" lenses, Fresnel lenses or from non-optical image elements designed to collect and concentrate light in the solid state photodetectors 61.
    The optical elements 70 shown in the embodiment of figure 7] are located only on the flat sides 67 of the scintillation crystal 60. The main reason for not using them in addition to the solid state photodetectors 61 located on the curved side of the crystal 60 is the limitations of space in the radial direction.
    In order to operate efficiently, said optical elements 70 require a substantial amount of volume and if used with photodetectors 61 on the curved side of the crystal60, they can lead to substantial deterioration in the efficiency of the detector due to the decrease of the volume of the scintillation crystal 60 within a fixed volume of the “10 detector-housing65. It can be seen that an additional advantage of using solid state detectors 61 in a radiation detector 11 is the increased resistance of detector 11 due to a more uniform mass distribution within the defector and the use of a monolithic configuration when the electronic board 62 is immersed in a compound 66 (shown in figure 6) such as a potting compound to reduce or eliminate the spaces.
    Compound 66 can absorb shock and vibration or increase the rigidity of a radiation detector 11. Next, a radiation detector 11 configured to detect neutrons at high temperatures is discussed.
    In one or more modalities, three different nuclear reactions can be used to detect neutrons.
    These are: n + * Hep (0.578 MeV) + * H (0.193 MeV) (a = 5330 b); (1) n + ºLisºH (2.75 Mev) + “He (2.05 MeV) (o = 520 b); and (2) n + ºB — Li (1.0 MeV) + “He (1.8 MeV) branching probability = 7%); (3) —Lço, 83 MeV) + “He (1.47 MeV) + y (0.48 MeV) branching probability = 93%), (total o = 3840 b) The reaction (1) requires the presence of He isotope; reaction (2) is based on the isotope “Li; and the reaction (3) occurs with nuclei 1ºB.
    Charged particles emitted as a result of the neutron reaction with one of the said nuclei can be detected using an ionization detector (for * He and
    * ºB in the form of BF gas; 3) or scintillation detector (for “Li and * ºB in the form: of different scintillation materials containing lithium and / or boron in high concentrations). Li-F glass with Pr added can work as a neutron-sensitive scintillation material 50 similar to traditional Li-6 glass scintillators such as KG-2, GS-20 and GS-2. FIGURE 8 shows the photoluminescence emission spectrum (PL) and the photoluminescence excitation spectrum (PLE) of the Li-F glass with Pr. the peak of PL is observed at 279 nm while the maximum PLE occurs at 234 nm.
    It can be seen from figure 8 that the luminescence spectrum of Li-F “10 glass added with Pr under consideration corresponds well to the QE curve of SIC APD.
    It can be observed that the light adsorption of Li-F glass, which constitutes the scintillation material 60 with ultraviolet (UV) wavelength range (250 nm - 320 nm), is low resulting in not much adsorption of the emitted light from the flicker process.
    Thus, in one or more modalities, a radiation detector 11 configured to detect neutrons is based on Pr 60 scintillation material containing SLi and / or ** B optically coupled to the SIC APDs used as the solid state photodetectors 51. Except for Li-F glass with Pr, the said single crystal scintillation materials containing lithium in a crystalline structure such as LICaAIF6: Ce (LiICAF: Ce) [A.
    Yoshikawa, T.
    Yanagida, K.J.
    Kim, N.
    Kawaguchi, S.
    Ishizu, K.
    Fukuda, T.
    Suyama, M.
    Nikl, M.
    Miyake, M.
    Baba, IEEE Dresden 2008, "Crystal growth, optical properties and neutron responses of ce * Doped LiICaAIF6 single crystal", IEEE Nuclear Science Symposium Conference Record (2008) 1212 - 1214] and LiSrAIFg: Ce (LISAF: Ce) [ Takayuki Yaagagida, Noriaki Kawaguchi, Yutaka Fujimoto, Yuui Yokota, Atsushi Yamazaki, Kenichi Watanabe, Kei Kamada, Akira Yoshikawa, “Evaluations of Scintillation Properties of LiSrAIF6 Scintillator for Thermal Neutron Detection", 2010, paper N10 , IEEE Nuclear Science Symposium 2010, Knoxville TN] show the emission of scintillation light in the wavelength range between 280 nm and 320 nm. As a result, in one embodiment, LICAF: Ce or LISAF: Ce can be used as the scintillation material 60 which is sensitive to neutrons.
    : In the case of classic scintillation materials, these materials have to accommodate the needs of the particle interaction to be detected with the creation of the charged particle and the needs for the deposition of energy in the charged particle and the light emission processes . In the case of neutron-sensitive composite scintillation materials such as the mixture of ZnS: Ag and B2O; or the mixture of ZnS: Ag and LiFg powders with a typical grain size of approximately 1 um bound with epoxy, the formation of a charged particle due to the reaction of (n, ºB) or (n, ºLi) " 10 occurrences in BO grains, or LiFs and the energy deposited by said particles in ZnS: Ag is converted into visible light, in which case different materials are responsible for the interaction of detected particles and the scintillation process and the properties of each material they have to correspond to only a set of needs for optimized performance. Because the chance of finding materials that fulfill a small list of needs is higher, this approach can allow for various scintillation materials with superior properties.
    In one embodiment, composite scintillation materials 60 based on polymer matrix and LaBra: C and nanoparticles are used for gamma ray detection. In this case, the gamma ray interaction occurs mainly in the matrix and the scintillation occurs in nanoparticles. It is observed that due to the effects of the nanoscale such as multiplication of exciton and the reduction of the density of the phonon range of the states, the scintillation process must occur in a more favorable way at high temperatures compared to the volume material of the same chemical composition. The multiplication of exxon provides higher values of LY and the reduction of phonon states makes LY (Temperature) less dependent on temperature due to the reduction in the probability of thermally induced ionization of excited electronic states. Even if the average nanoparticle scintillation size is less than% of the wavelength of the light emitted in the scintillation process when the emitted light is not dispersed in the said nanoparticles and as a result the losses of the emitted light are minimized.
    It should be noted that in the case of the scintillation materials of the aforementioned compounds, the scattering of light at the grain boundaries with a typical size> 1 µm and related losses of the scintillation light allow all of the said scintillators only in the form of each thin layer directly deposited in the PMT optical window. Thus, the use of scintillation nanoparticles within the transparent matrix prevents the dispersion of light, and as a result detectors with large scintillation elements can be constructed using composite scintillators. Except for the optimization of the properties of matrix material and scintillation nanoparticles, there are two main challenges related to the design of the composite material itself. The challenges mentioned are the compatibility of the matrix material and nanoparticles (the matrix must not destroy the properties of the nanoparticles in the process of impregnating the nanoparticles in the matrix and the matrix must be transparent to the light emitted in the scintillation process) and the matrix fill factor with nanoparticles (if there are many nanoparticles, the detection efficiency is low due to the fact that there is not enough matrix material for the detected particles to interact; if the concentration of nanoparticles is too low, many charged particles will not be able to reach the scintillation nanoparticles and deposit their energy in the matrix).
    In the case of neutron-sensitive scintillation materials, due to the high cross sections of the reactions (n / "ºB) and (n / Li), the effective thickness of the matrix material in the case of composite scintillator can be relatively small (approximately 2 to 5 mm). As a result of the small thickness, some of the challenges described above tend to become irrelevant. The following approaches can be used to design neutron-sensitive scintillation materials 60 Na First approach, the polymer matrix is enriched with * ºBouºLiatra through the use of boron oxide nanoparticles and lithium oxides and nanoparticles of Ce scintillation material such as La-Bra3: Ce, YAG: Ce, etc. As scintillation centers The maximum emission spectrum of the scintillator added to Ce is around 375 - 420 nm and it is possible to find matrix material such as transparent rubbers based on silicone in the aforementioned wavelength range. , the curve d and QE of the SiC APD does not correspond to said wavelength range and, therefore, other solid state photodetectors should be used such as those produced from GaN.
    In a second approach, the matrix is produced from silicate glass enriched with boron * ºB and nanoparticles of oxide scintillators added to Ce such as YAG: Ce and YAP: Ce. Nanoparticles produced from “10 oxide demateria have much stability at high temperatures necessary for their impregnation in the glass matrix (700 to 900º C). Boron silicate glasses are transparent in the wavelength range of 375 nm - 420 nm, but GaN based APD should be used for light detection with said scintillating matrix material.
    In a third approach, a fluorine-based glass matrix is enriched with * ºB or “Li and loaded with nanoparticles produced from YAG: Pr, YAP: Pr, LICAF: Ce, LiSAF: Ce or any other scintillation material which emits light in the deep UV wavelength range. Fluorine glasses are relatively transparent in that wavelength range and, as a result, the light emitted by the scintillation nanoparticles will be able to achieve an SiC APD.
    As noted above, the probability of said neutron-sensitive scintillation materials to be compatible with high temperature (that is, to have LY values at high temperatures in an acceptable range) is high due to the nanoscale phenomenon, scintillation kinetics favorable to Ce and Pr ions, and favorable electronic structure of the material itself. Thus, said scintillation materials 60 are compatible with SiC and / or GaN based APDs can be used to build neutron detectors compatible with high temperature.
    Next, photodetector configurations for use in a radiation detector 11 that is configured to detect neutrons are discussed. As noted above, due to the high values of thermal neutron capture reactions involving * ºB and “Li, the neutron-sensitive scintillation material layer with a thickness of approximately 5 mm provides almost 100% adsorption of thermal neutrons . Thus, the techniques describe the scintillation material 60 of the neutron detector having a large geometric cross-section, which can have the shape of a hollow cylinder or half-cylinder as shown in figure 9. In that embodiment, solid state photodetectors 61 or their arrangements are located on the internal surface of the scintillation material 60. Still in the said modality, the optical elements 70 can be used to improve the light capture “10 without increasing the outside diameter of a radiation detector 11. As in the case of a radiation detector 11 configured to detect gamma rays, different lens arrangements and / or arrangements of non-optical imaging elements can be used. Electronic board (s) 62 with power source 64 and signal analysis circuit 63 can be located on at least one of the flat sides of the scintillation material 60 (similar to the gamma ray detector), within the scintillation material space 60, or on the underside of a long flat base 90 coupled to the medium cylindrical shape scintillation material 80 as shown in figure 9. In one embodiment , the base 90 can still be the electronic board 62.
    As discussed above, the techniques provide several optical elements 70 for optically coupling the scintillation material 60 to the array of solid state photodetectors 61. Said optical elements 70 are necessary because the size of each solid state photodetector 61 is generally much smaller than the size of the scintillation material 60.
    Thus, optical elements 70 are necessary to capture light that would not be detected if not for the capture and concentration properties of optical elements 70.
    Reference can now be made to FIGURES 10A and 108, illustrating the aspects of the optical elements 70. The optical elements 70 are configured to capture the light L generated in the scintillation material 60 by the interactions with the received radiation. The captured moon L is then concentrated in one or more of the solid state photodetectors 61. FIGURE 10A illustrates
    via a connected lens array 81. Lens array 81 focused the L light received on one or more of the solid state photodetectors 61. In one embodiment, lens 81 is Fresnel lens. FIGURE 10B illustrates an arrangement of optical non-imaging structures 82 such as mirrors formed as composite parabolic concentrators. Each optical non-image structure 82 includes a facet 83 to capture L light and a cone 84 to concentrate L light captured on one or more of the solid state photodetectors 61.
    In another embodiment, when nanoparticles sparkle in * 10 butides within a transparent polymer or glass matrix, the said matrix can be heated and dragged over a long optical fiber, which is then | wound on a spool. To collect the light that is produced in the fiber, a photodetector can be disposed on one end of the fiber and another photodetector can be disposed on the other end of the fiber, thus reducing the number of photodetectors that are needed and still eliminating the elements. concentration of light from lenses and / or concentration mirrors.
    In support of the teachings here, several analysis components can be used, including a digital and / or an analog system. For example, downhole electronics 8, surface computer processing 6, or electronic board 62 may include the digital or analog system. The system can have components such as a processor, a storage medium, memory, input, output, communications links (wired, wireless, pulsed mud, optics or other), user interfaces, software, signal processors (digital or analog) and other referred components (such as resistors, capacitors, inductors and others) to provide the operation and analysis of the apparatus and methods described here in any of the several ways well appreciated in the art. It is considered that these teachings can be, but need not be, implemented in conjunction with a set of executable instructions by computer stored in a medium capable of being read by a non-transitory computer, including memory (ROMs, RAMs), optics ( CD-ROMs), or magnetic (disks, hard drives), or any other type that when running
    cause the computer to implement the method of the present invention. These instructions can provide equipment operation, control, data collection and analysis and other functions deemed relevant by a system designer, owner, user or other person, in addition to the functions described in the description.
    In addition, several other components can be included and called upon to provide aspects of the teachings here. For example, a power source (for example, at least one from a generator, a remote source and a battery), cooling component, heating component * 10, magnet, electromagnet, sensor, electrode, transmitter,. receiver, transceiver, antenna, controller, optical unit, electrical unit or electromechanical unit can be included in support of the various aspects discussed here or in support of functions other than those described. The term "carrier" as used herein means any device, device component, combination of devices, means and / or members that can be used to transport, house, support or otherwise facilitate the use of another device, device component, combination of devices, medium and / or member. Other non-limiting exemplary conveyors include drill columns of the coiled tube type, the joined tube type and any combination or portion thereof. Other examples of conveyors include casing tubes, wirings, spinning probes, smooth lines probes, drop shots, well bottom assemblies, drill string insertion device, modules, internal housings and substrate portions thereof .
    Elements of the modalities were introduced either with the articles "o", "a" or "um", "uma". The articles are intended to mean that there is one or more of the elements. The terms "including" and "having" are intended to be inclusive so that there may be additional elements other than those listed. The conjunction "or" when used with the list of at least two terms is intended to mean any term or combination of terms. The terms "first" and "second" are used to distinguish the elements and are not used to denote a particular order. The term "coupling" refers to a device being directly coupled to the other device or indirectly coupled via an intermediate device. It will be recognized that various components or technologies may provide certain beneficial or necessary features or features or. Accordingly, said functions and features, as may be necessary in support of the appended claims and variations thereof, are recognized to be inherently included as a part of the teachings herein and a part of the present invention described.
    "O Although the present invention has been described with reference. to the exemplary modalities, it will be understood that several changes can be produced and equivalent can be replaced by elements of the same without deviating from the scope of the present invention. In addition, many modifications will be observed to adapt a particular instrument, situation or material to the teachings of the present invention without deviating from its essential scope. Therefore, it is intended that the present invention is not limited to the particular modality described as the best contemplated way of carrying out the present invention, but that the present invention will include all modalities that fall within the scope of the appended claims.
    权利要求:
    Claims (13)
    [1]
    1. Apparatus configured to detect radiation at high temperatures in a well bore penetrating the earth, the apparatus characterized by comprising: a scintillation material (60) that interacts with radiation at high temperatures to generate photons; at least one solid state photodetector (61) optically coupled to the scintillation material (60) and configured to detect radiation by detecting the generated photons; and at least one optical element (70) disposed between the scintillation material (60) and the at least one solid state photodetector (61) and configured to concentrate the photons generated in the scintillation material (60) on the at least one solid state photodetector (61).
    [2]
    Apparatus according to claim 1, characterized by the fact that at least one solid state photodetector (61) is an array of solid state photodetectors (61), and at least one optical element (70) is an array of optical elements.
    [3]
    3. Apparatus according to claim 2, characterized by the fact that it additionally comprises electronic circuits (62) including a low voltage power source (64) and a signal analysis circuit (63) coupled to each photodetector solid state (61) in the array of solid state photodetectors (61).
    [4]
    4. Apparatus according to claim 3, characterized by the fact that a low voltage from the low voltage power source (64) is less than or equal to 200 volts.
    [5]
    5. Apparatus according to claim 3, characterized by the fact that the scintillation material (60), the array of solid state photodetectors (61), and the electronic circuits (62) are arranged in a housing. to; which further comprises a compound configured to fill the spaces external to the scintillation material (60) and the arrangement of solid state photodetectors (61) inside the housing in order to absorb vibrations or shock.
    [6]
    6. Apparatus according to claim 2, characterized by the fact that the array of solid state photodetectors (61) comprises avalanche photodiodes.
    [7]
    Apparatus according to claim 1, characterized in that the at least one optical element (70) comprises at least one lens to focus a portion of the photons generated on the at least one solid-state photodetector (61).
    [8]
    8. Apparatus according to claim 1, characterized by the fact that the at least one optical element (70) comprises a plurality of connected non-image facets, each facet being configured to collect a portion of the photons and concentrate the photon portion in at least one photodetector, which still comprises a cone optically coupled to at least one of the non-image facets in order to concentrate the photon portion.
    [9]
    9. Apparatus according to claim 1, characterized in that the radiation is gamma radiation, in which the scintillation material (60) comprises a monocrystalline oxide compound, in which the monocrystalline oxide compound is added with at least one of cerium ions (Ce) and praseodymium ions (Pr).
    [10]
    10. Apparatus, according to claim 1, characterized by the fact that the radiation is neutron.
    [11]
    Apparatus according to claim 10, characterized by the fact that the scintillation material (60) comprises LiCaAlF; s or LS- —AlAl; additive with Ce ions, in which the scintillation material (60) comprises a polymer matrix enriched with * ºB or “Li through the use of boron oxide nanoparticles or lithium oxides and oxide scintillator nanoparticles being added with Ce ions, and at least one solid state photodetector (61) is produced from GaN.
    [12]
    Apparatus according to claim 10, characterized in that the scintillation material (60) is formed as a hollow cylinder or constitutes a longitudinal section of a hollow cylinder, in which the at least one solid state photodetector ( 61) is an array of solid state photodetectors (61), and the array of solid state photodetectors (61) is arranged in at least one internal to the hollow cylinder and along the longitudinal section of the hollow cylinder , additionally comprising a base detector coupled to the longitudinal section of the hollow cylinder and forming an interior space, in which the electronic circuits (62) comprising the low voltage power source (64) and the signal analysis circuit (63) coupled to at least one solid state photodetector (61) are arranged in the base detector outside the interior space.
    [13]
    13. Apparatus configured to detect radiation at high temperatures in a borehole penetrating the earth, the apparatus characterized by comprising: a downhole tool configured to be transported through the borehole; a scintillation material (60) that interacts with radiation at high temperatures to generate photons; at least one solid state photodetector (61) optically coupled to the scintillation material (60) and configured to detect radiation by detecting the generated photons; and at least one optical element (70) disposed between the scintillation material (60) and the at least one solid state photodetector (61) and configured to concentrate the photons generated in the scintillation material (60) on the at least one solid state photoconductor; wherein the scintillation material (60), the at least one solid state photoconductor, and the at least one optical element (70) are arranged in the downhole tool.
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    同族专利:
    公开号 | 公开日
    US20120267519A1|2012-10-25|
    NO20130462A1|2013-05-24|
    US8692182B2|2014-04-08|
    WO2012058440A1|2012-05-03|
    GB2498303A|2013-07-10|
    GB201306859D0|2013-05-29|
    GB2498303B|2017-02-08|
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    2020-10-27| B06F| Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]|
    2020-11-10| B06U| Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]|
    2021-02-23| B11B| Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements|
    2021-11-23| B350| Update of information on the portal [chapter 15.35 patent gazette]|
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